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HL: Fachverband Halbleiterphysik

HL 7: Transport properties I

Monday, March 18, 2024, 15:00–17:00, ER 325

15:00 HL 7.1 Challenges of mapping transport parameters of N-doped 4H-SiC by Raman spectroscopy — •Hannes Hergert, Matthias T. Elm, and Peter J. Klar
15:15 HL 7.2 Stoichiometry fluctuations and geometrical confinement in random alloys: a case study on SiGe:C — •Daniel Dick, Florian Fuchs, Jörg Schuster, and Sibylle Gemming
15:30 HL 7.3 Ti2MnAl and its modifications, as possible Spin-Gapless-Semiconductor materials. — •Jerzy Goraus, Wojciech Gumulak, and Jacek Czerniewski
15:45 HL 7.4 Electrical Conductivity and Carrier Mobility for Strongly Anharmonic Materials from First Principles — •Jingkai Quan, Christian Carbogno, and Matthias Scheffler
  16:00 15 min. break
16:15 HL 7.5 Electronic Transport Properties of Janus Ge-Based Two-Dimensional IV-V Monolayer — •Dogukan Hazar Ozbey, Gozde Ozbal Sargin, Veli Ongun Ozcelik, and Engin Durgun
16:30 HL 7.6 Charge Carrier Mobilities in 2D Carbon Allotropes — •Elif Ünsal, Alexander Croy, Alessandro Pecchia, and Gianaurelio Cuniberti
16:45 HL 7.7 Comparison of the application of the TRMC technique for the characterization of crystalline silicon and perovskite solar cell absorber material and efficient surface passivationArpana Singh, Biruk Alebachew Seid, Felix Lang, Marinus Kunst, and •Heinz-Christoph Neitzert
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