Berlin 2024 – wissenschaftliches Programm
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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur
KFM 13: Focus Session: (Multi-)Ferroic States III
KFM 13.3: Vortrag
Mittwoch, 20. März 2024, 10:20–10:40, EMH 225
Atomic-scale control of exchange bias at ferroelectric BaTiO3 and ferromagnetic La0.67Sr0.33MnO3 interface — •Manisha Bansal1, Tuhin Maity1,2, and Judith L. MacManus-Driscoll2 — 1School of Physics, Indian Institute of Science Education and Research Thiruvananthapuram, Thiruvananthapuram, Kerala 695551, India — 2Department of Materials Science and Metallurgy, University of Cambridge, CB3 0FS, UK
The atomic-scale interfaces in 3D transition-metal oxides give rise to intriguing phenomena, including magnetoelectric coupling and unconventional exchange bias (EB) coupling. They hold promises for the next-generation nanoscale spintronics applications such as high-density memory and sensor technologies. We demonstrate EB coupling (~40Oe at 2 K) at the interface of epitaxially grown ferromagnetic (FM) La0.67Sr0.33MnO3 (LSMO)-ferroelectric (FE) BaTiO3 (BTO) bilayer thin films on TiO2 terminated SrTiO3 (STO) substrates in the absence of any conventional antiferromagnetic (AFM) material due to strain induced FE screening effect by BTO. Such EB is only observed when the thickness (t) of BTO is 5<t<10 unit cells (uc) and LSMO is only a few unit cells (<=14uc). The out-of-plane (OOP) polarization is lost in thicker BTO followed by the negligible EB due to multi domains formation. STEM and DFT confirms the OOP polarized Ti atoms which further displaces the interfacial Mn sites from their centrosymmetric positions in LSMO. This modifies the d-orbital occupancy of interfacial Mn, favoring an interface induced EB in LSMO-BTO bilayer films without any AFM material.
Keywords: Thin films; Exchange bias; Ferroelectrics; Multiferroics; Spintronics