Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur

KFM 16: Crystal Structure Defects / Real Structure / Microstructure I

KFM 16.7: Vortrag

Mittwoch, 20. März 2024, 17:10–17:30, E 124

Laser-induced crystallization of Sb2S3 and GeSe at different excitation wavelengths — •Ramon Pfeiffer, Maximilian Müller, and Matthias Wuttig — Institute of Physics (IA), RWTH Aachen University, 52074 Aachen, Germany

The laser-induced crystallization of materials such as Sb2S3 and GeSe at a wavelength of 658 nm requires high laser powers to recrystallize an amorphous region. Even higher powers are needed to induce vitrification back into the glassy phase. Since these materials possess a much higher absorption coefficient at shorter wavelength, more efficient switching is expected employing a blue laser diode. A shorter wavelength, and hence a reduced spot size, also results in a smaller possible device structure. For this reason, we have implemented a laser with a wavelength of 405 nm into the 658 nm setup of our optical phase change tester. This enables a straightforward comparison of the switching properties of different compounds.

Keywords: crystallization; Laser; Sb2S3; GeSe