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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur

KFM 3: Focus Session: (Multi-)Ferroic States I

KFM 3.5: Vortrag

Montag, 18. März 2024, 10:50–11:10, EMH 225

Current distribution in simple ferroelectric domain-wall-based devices — •Leonie Richarz¹, Jiali He¹, Konstantin Shapovalov², Edith Bourret³, Zewu Yan^3,4, Antonius T.J. van Helvoort¹, and Dennis Meier¹ — ¹NTNU Norwegian University of Science and Technology, Trondheim, Norway — ²University of Liège, Liège, Belgium — ³Lawrence Berkeley National Laboratory, Berkeley, CA, USA — ⁴ETH Zurich, Zurich, Switzerland

Ferroelectric domain walls can exhibit fundamentally different electronic properties than the surrounding bulk material, making them interesting for the application in next-generation electronic devices. After comprehensive studies of the fundamental physics of domain walls, the community is now more and more shifting the focus towards their integration and performance in different device architectures.
Here, we investigate the distribution of electrical currents in domain wall networks in ErMnO₃, considering basic two-terminal architectures. We deposit static metal electrodes on the domain walls and use a conductive atomic force microscopy tip as an additional movable monitoring contact. In this way, we can investigate the influence of the metal-semiconductor interface between the electrode and the sample, as well as the influence of the domain walls on the current distribution in the ferroelectric material.
Our results provide insight into the current evolution in ferroelectric domain wall systems, facilitating the design of ferroelectric domain wall-based devices.

Keywords: Ferroelectrics; Domain Wall; Electrodes; AFM