Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur
KFM 33: Focus Session: (Multi-)Ferroic States V
KFM 33.7: Vortrag
Freitag, 22. März 2024, 11:45–12:05, EMH 225
Direct probing of dislocation-controlled domain nucleation and domain-wall pinning in single-crystal BaTiO3 by multi-stimuli MEMS-based in situ TEM — •Tianshu Jiang1, Fangping Zhuo1, Oscar Recalde-Benitez1, Yevheniy Pivak2, and Leopoldo Molina-Luna1 — 1Institute of Materials Science, Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt, Germany — 2DENSsolutions, Informaticalaan 12, Delft, The Netherlands
Engineering domain walls to control their nanoscale mobility influences macroscopic properties, crucial for electromechanics and electronics. This is evident in imprinting topological defects in materials, highlighting the field's potential. However, despite the critical role of defect-mediated domain nucleation and domain wall mobility, our comprehensive understanding of these phenomena remains limited. Here, we explore the dislocation-mediated domain nucleation and domain wall mobility in single-crystal BaTiO3 at nanoscale by applying multi-stimuli MEMS-based in situ transmission electron microscopy (TEM). A dense, well-aligned "forest" of dislocations, intentionally imprinted, serves to selectively nucleate in-plane domain variants. Utilizing multi-stimuli in situ TEM, we highlight the direct observation of the pinning of ferroelastic domain walls by these imprinted dislocations. This strong pinning of domain walls results from the stress fields associated with the imprinted dislocations. Our findings advance domain wall engineering in ferroelectrics, offering a novel strategy for advanced nanoelectronics and bulk applications over a broad temperature range.
Keywords: multi-stimuli; in situ TEM; dislocation-domain wall interaction; domain nucleation; ferroelectrics