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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur

KFM 5: Thin oxides and oxide layers (joint session DS/KFM)

KFM 5.4: Vortrag

Montag, 18. März 2024, 10:15–10:30, A 053

Exploration of zirconium doping in pulsed laser deposited α-Ga₂O₃ for devices — •Sofie Vogt¹, Thorsten Schultz^2,3, Clemens Petersen¹, Holger von Wenckstern¹, Norbert Koch^2,3, and Marius Grundmann¹ — ¹Universität Leipzig, Felix-Bloch-Institut, Leipzig — ²Humboldt Universität zu Berlin, Institut für Physik, Berlin — ³Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Solar Energy, Berlin

Gallium oxide, known for its ultrawide bandgap, crystallizes in different polymorphs, of which the β-phase is the thermodynamically most stable and most investigated one. However, the metastable corundum structured α-phase exhibits a wider bandgap and therefore a potentially higher electrical breakdown field compared to β-Ga₂O₃^[1]. Doping of α-Ga₂O₃ with tin, silicon and germanium has been demonstrated^[2,3] . We present α-Ga₂O₃ thin films grown by pulsed laser deposition in a two-step process. Undoped α-Ga₂O₃ grown at high temperature is used as buffer layer. The zirconium doped α-Ga₂O₃ is deposited atop the buffer layer at a temperature <600^∘C, to ensure the deposition of conductive thin films. The structural and electrical properties of Zr doped thin films are compared to Sn, Si and Ge doped thin films with regards to the crystal quality, conductivity, free carrier concentration and electron mobility. First Schottky barrier diodes based on the α-Ga₂O₃:Zr thin films are presented.

[1] Higashiwaki et al., Appl. Phys. Lett., 100, 013504 (2012)

[2] Akaiwa et al., phys. status solidi (a), 217, 3, 1900632 (2020)

[3] Vogt et al., phys. status solidi (a), 220, 3, 2200721 (2023)

Keywords: Galliumoxid; Schottky Dioden; Hall-Effekt; XPS; XRD