Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur
KFM 9: KFM Poster Session
KFM 9.24: Poster
Montag, 18. März 2024, 18:00–20:00, Poster E
Interplay between Defects and Ferroelectric Domain Wall Properties — •Egil Y. Tokle1, Leonie Richarz1, Edith Bourret2, Zewu Yan2,3, and Dennis Meier1 — 1NTNU Norwegian University of Science and Technology, Trondheim, Norway — 2Lawrence Berkeley National Laboratory, Berkeley, CA, USA — 3ETH Zurich, Switzerland
Ferroelectric domain walls are natural interfaces separating volumes with different orientation of the spontaneous polarization. These walls can display fundamentally different conduction properties than the surrounding material. For instance, the conductance at domain walls in hexagonal manganites can range from insulating to highly conducting relative to the ferroelectric domains. Interestingly, the transport behavior correlates with the oxygen off-stoichiometry of the system. In previous studies, we observed that annealing in reducing atmosphere can significantly increase the relative domain wall conductance.
In this work, we systematically study the influence of different annealing parameters - such as annealing temperature and dwell time - and monitor the impact on the electronic transport behavior of domain walls Er(Mn,Ti)O3, using conducting atomic force microscopy. Our results provide new insights into the underlying microscopic mechanisms and give detailed guidelines for property engineering at the level of the domain walls.
Keywords: Ferroelectric; Domain Wall; Nano-Engineering; Hexagonal Manganites; Point Defects