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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur

KFM 9: KFM Poster Session

KFM 9.31: Poster

Montag, 18. März 2024, 18:00–20:00, Poster E

Defect analysis of beta to gamma phase transition in Gallium Oxide — •Umutcan Bektas, Maciej Oskar Liedke, Fabian Ganss, and Gregor Hlawacek — Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany

Gallium oxide (Ga2O3) is a unique material for power electronics, optoelectronics, and batteries. However, controlling the metastable polymorph phases of Ga2O3 is challenging, and the fabrication technology at the nanoscale is immature. We aim to understand and control the polymorph conversion to establish new fabrication methods of single-phase polymorph coatings, buried layers, multilayers, and different nanostructures in Ga2O3.

Under ion beam irradiation, most semiconductors show the transformation from crystalline to amorphous structure due to ion beam-induced damage. However, we showed that this transformation is suppressed in Ga2O3, and a polymorph conversion is observed instead. Here, we analyzed the defect formation during the beta-Ga2O3 to gamma-Ga2O3 phase transition, induced by ion implantation with different ions and fluences. Characterization of the samples was conducted by Positron annihilation lifetime spectroscopy (PALS), Doppler broadening variable energy positron annihilation spectroscopy (DB-VEPAS), and X-ray Diffraction (XRD). The first results indicate that the defect size and concentration depend on the implanted ion type, fluence, and annealing temperature. This work is supported by the state of Saxony.

Keywords: Gallium Oxide; Defects in Gallium Oxide; Positron Annihilation Lifetime Spectroscopy; Doppler broadening spectroscopy; X-ray diffraction