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MA: Fachverband Magnetismus

MA 11: Functional Antiferromagnetism

MA 11.13: Talk

Monday, March 18, 2024, 18:15–18:30, EB 202

Bi-directional current-induced switching of insulating antiferromagnetic thin films — •Christin Schmitt1, Adithya Rajan1, Grischa Beneke1, Aditya Kumar1, Tobias Sparmann1, Hendrik Meer1, Beatrice Bednarz1, Rafael Ramos2, Miguel Angel Niño3, Michael Foerster3, Eiji Saitoh2, and Mathias Kläui11Institute of Physics, Johannes Gutenberg-University Mainz, Germany — 2Department of Applied Physics, The University of Tokyo, Japan — 3ALBA Synchrotron Light Facility, Spain

Antiferromagnets (AFMs) have gained interest as active elements in spintronic devices due to intrinsic dynamics in the THz range and the absence of stray fields. Efficient electrical writing and reading is necessary in terms of applications but challenging to realize. For insulating AFMs different switching mechanisms based on spin-orbit torques (SOTs) or thermomagnetoelastic effects have been put forward [1,2]. Here, we focus on ultrathin CoO/Pt films, where SOTs should be particularly pronounced. We observe that electrical pulses along the same path can lead to an increase or decrease of the electrical readout-signal, depending on the current density of the pulse. By photoemission electron microscopy (PEEM) employing the x-ray magnetic linear dichroism (XMLD) effect we shed light on this observation and determine for which situations this is a sign of two competing switching mechanisms or a result of the way the electrical measurement is conducted [3]. [1] T. Moriyama, et al., Sci. Rep. 8, 14167 (2018). [2] P. Zhang, et al., Phys. Rev. Lett. 123, 247206 (2019). [3] C.Schmitt, et al., arXiv:2303.13308.

Keywords: Antiferromagnet; Electrical-switching; XMLD-PEEM; Thermomagnetoelastic; Spin-orbit torque

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