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MA: Fachverband Magnetismus
MA 11: Functional Antiferromagnetism
MA 11.3: Vortrag
Montag, 18. März 2024, 15:30–15:45, EB 202
Non-Volatile Spin-Orbit Torque Driven Antiferromagnetic Memristor — •Joao Godinho1, Pradeep Rout1, Ruslan Salikhov2, Olav Hellwig2, 3, Zbynek Soban4, Ruben Otxoa5, Kamil Olejnik4, Tomas Jungwirth4,6, and Joerg Wunderlich1,4 — 1University of Regensburg, Regensburg, Germany — 2Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany — 3Institute of Physics, Chemnitz University of Technology, Chemnitz, Germany — 4Institute of Physics, ASCR, Prague, Czech Republic — 5Hitachi Cambridge Labyoratory, Cambridge, United Kingdom — 6School of Physics and Astronomy, University of Nottingham, United Kingdom
Magnetic data storage is based on the switching and detection of energetically degenerate ferromagnetic ground states with reversed magnetization separated by a sufficiently high energy barrier to maintain the long-term non-volatility of the stored data. Therefore, exploiting the many advantages of zero net moment antiferromagnets (AFM) for fast and energy-efficient magnetic storage will also rely on the realization of switching and detecting stable AFM states with reversed magnetic order. Here we show switching between non-volatile states with opposite Néel vector detections in a compensated out-of-plane synthetic AFM. The manipulation of the AFM order is achieved by generating relativistic effective spin-orbit fields and its detection via higher-order magneto-transport responses. Furthermore, besides the storing of binary "0" or "1" corresponding to two fully polarized magnetic states with reversed Néel vectors, we also show that partial switching enables the realization of non-volatile memristor type of devices.
Keywords: Antiferromagnetic Spintronics; Synthetic Antiferromagnet; Nonlinear Magnetoresistance; Non-Volatile Memristor