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MA: Fachverband Magnetismus
MA 11: Functional Antiferromagnetism
MA 11.8: Vortrag
Montag, 18. März 2024, 17:00–17:15, EB 202
Electronic structure of epitaxial CuFeS2 thin films — •Anders Christian Mathisen, Richard Justin Schenk, Stefanie Suzanne Brinkman, Xin Liang Tan, Matthias Hartl, Christoph Brüne, and Hendrik Bentmann — Center for Quantum Spintronics, Department of Physics, NTNU Trondheim, Norway
Chalcopyrite, CuFeS2, has over the years seen interest in many areas, often due to its thermoelectric properties, and as a source of copper. More recently, the material has gained attention as an antiferromagnetic semiconductor with a high Néel temperature (TN = 823 K). CuFeS2 is a collinear antiferromagnet with alternating spin-polarized planes along the c-direction of the body-centered tetragonal unit cell (space group I42d, No. 122). This is especially useful in the field of ultra-fast electronics, where the high-frequency spin dynamics and robustness against external magnetic fields plays an essential role. We present epitaxial growth of CuFeS2 thin films on Si(001) substrates using molecular beam epitaxy (MBE). We probed the electronic structure of these films using laboratory-based photoelectron momentum microscopy and soft X-ray angle-resolved photoemission spectroscopy (ARPES). We compare the experimental findings to the results of ab initio calculations based on density functional theory. Our results promote CuFeS2 thin films as a candidate for device concepts in antiferromagnetic spintronics.
Keywords: ARPES; CuFeS2; MBE