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MA: Fachverband Magnetismus

MA 20: Poster I

MA 20.26: Poster

Dienstag, 19. März 2024, 16:30–19:00, Poster A

Spin transport in Fe₄GeTe₂ van der Waals heterostructures — •Masoumeh Davoudiniya and Biplab Sanyal — Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala, Sweden

Through first-principles calculations, this study aims to theoretically investigate the spin-dependent electronic transport properties within Fe₄GeTe₂ (F4GT) -based van der Waals heterostructures, a class of 2D itinerant ferromagnets with a Curie temperature approaching room temperature. We will illustrate spin-polarized ballistic transport in configurations involving single- or bi-layer F4GT interfaced with PtTe₂ electrodes. The electronic density of states, whether for free-standing or device-configured F4GT, unequivocally confirms its ferromagnetic metallic character. Notably, it reveals a weak interface interaction between F4GT and PtTe₂ electrodes, which preserves the magnetic properties of free standing F4GT. In the scenario of a double-layer F4GT with a ferromagnetic configuration situated between PtTe₂ electrodes, an anticipated spin polarization of an impressive 97% is observed. Furthermore, the spin transport characteristics of F4GT/GaTe/F4GT vdW heterostructures, positioned between PtTe₂ electrodes, have been studied to assess their potential as magnetic tunnel junctions in spintronic devices. The introduction of GaTe as a 2D semiconducting spacer between F4GT layers yields a tunnel magnetoresistance of 487% at low bias. These findings present novel prospects for formulating and enhancing spintronic devices based on FGT and similar heterostructures.

Keywords: Van der Waals heterostructures; Spin polarization; Magnetic tunnel junctions; Ballistic transport