Berlin 2024 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 20: Poster I
MA 20.46: Poster
Dienstag, 19. März 2024, 16:30–19:00, Poster A
Molecular beam epitaxial growth of Bi2Te3 thin films — •Aeneas Leingärtner-Goth1,2, Monika Scheufele1,2, Matthias Althammer1,2, Hans Huebl1,2,3, Stephan Geprägs1, and Rudolf Gross1,2,3 — 1Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Garching, Germany — 2Technical University of Munich, Garching, Germany — 3Munich Center for Quantum Science and Technology (MCQST), Munich, Germany
Topological insulators such as Bi2Te3 are known to exhibit exotic electronic band structures, leading to robust metallic surface states while their bulk spectrum remains gapped [1]. Their intriguing properties make topological insulators candidates for applications in spintronics and quantum computing; their fabrication, however, remains challenging. For example, both anti-site defects and vacancies in Bi2Te3 can lead to an enhanced bulk conductivity that overwhelms the contribution of the surface states. Therefore, high-quality Bi2Te3 thin films with low bulk defect concentrations are required. Here, we discuss the fabrication of Bi2Te3 thin films on (111)-oriented Si substrates by molecular beam epitaxy monitored by reflection high-energy electron diffraction. We characterize the structural and electric properties of these films by high-resolution X-ray diffraction, atomic force microscopy, and electric transport measurements in order to determine the optimal growth conditions for high-quality Bi2Te3 thin films.
[1] Y. L. Chen et al., Science 325, 178-181 (2009)
Keywords: Thin Films; Bi2Te3; MBE