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MA: Fachverband Magnetismus

MA 29: Spin-Dependent Phenomena in 2 D

MA 29.12: Vortrag

Mittwoch, 20. März 2024, 18:00–18:15, EB 202

Evolution of van der Waals gap and exchange bias in Fe3GeTe2/MnPS3 vdW heterostructure — Aravind Puthirath Balan¹, •Aditya Kumar¹, Patrick Reiser², Joseph Vimal Vas³, Thibaud Denneulin³, Andras Kovacs³, Patrick Maletinsky², and Mathias Kläui¹ — ¹Institute of Physics, Johannes Gutenberg University Mainz, Staudinger Weg 7, 55128 Mainz, Germany — ²Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland — ³Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, 52425 Jülich, Germany

The inherent layered structure of Van der Waals (vdW) materials allows the fabrication of heterostructures with perfect interfaces and the study of interface-related phenomena such as Exchange bias (EB) ^[1]. This study presents a comprehensive analysis of EB in the Fe3GeTe2 (FM) and MnPS3 (AFM) vdW heterostructure, revealing insights into its origin and unique evolving nature. A large EB of 170 mT was observed at 5K in this system due to pinning from anomalous ferromagnetic ordering that emerges in MnPS3 at low temperatures. The evolving nature of EB is due to thermal cycling-induced modification of the interface registry, accompanied by vdW gap modification, as confirmed by STEM measurements. This work offers new insights into the nature of interfaces between vdW materials and the potential method for tuning EB and the vdW gap.

^[1] Balan et al. arXiv preprint arXiv:2303.13167 (2023)

Keywords: Exchaneg bias; Van der Waals; NV magnetometry