Berlin 2024 – scientific programme

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MA: Fachverband Magnetismus

MA 41: Spintronics (Other Effects)

MA 41.10: Talk

Thursday, March 21, 2024, 17:30–17:45, H 2013

Strong tuning of Rashba spin-orbit coupling and crossover from weak localization to weak antilocalization in ionic-gated tellurium — •Dorsa Fartab¹, José Guimarães^1,2, Marcus Schmidt¹, and Haijing Zhang¹ — ¹Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany — ²School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS, United Kingdom

Electrostatic control of the charger carrier density inside the solids is an important factor to realize different phase transitions in two-dimensional materials such as insulator-metal transition and superconductivity. Moreover, the gate control of electron spin in materials with high spin-orbit coupling (SOC) is a key factor in the field of spintronics. Here, I will first provide a brief overview of electric double layer transistors (EDLTs) and highlight the advantages of utilizing ionic liquids as the dielectric medium over conventional solid dielectrics; then, I will present our experimental results of ionic liquid gated p-type tellurium (Te). Our results show the possibility of gate tuning insulator-metal transition and the crossover from weak localization (WL) to weak anti-localization (WAL) into the sample, implying an increased Rashba-like SOC in the material created by a strong electric field restricted to the solid/electrolyte interface in EDLTs. More interestingly, we have demonstrated the ability to control the electron spin and amplify the Rashba parameter by a factor of 4 through ionic gating Te, which could have potential applications in the field of spintronics.

Keywords: Magnetotransport; Mesoscopics; Spin-orbit coupling; Spintronics; Weak antilocalization