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MA: Fachverband Magnetismus

MA 41: Spintronics (Other Effects)

MA 41.5: Talk

Thursday, March 21, 2024, 16:00–16:15, H 2013

Oxygen-Vacancies-Driven Resistive Switching in Epitaxial Fe₃O₄ Thin Films — •Yifan Xu^1,2, Connie Bednarski-Meinke², Steffen Tober², Asmaa Qdemat², Felix Gunkel³, Regina Dittmann³, Oleg Petracic^2,1, and Mai Hussein Hamed^2,4 — ¹Heinrich Heine University Düsseldorf, Faculty of Mathematics and Natural Sciences, Düsseldorf, Germany — ²Jülich Centre for Neutron Science (JCNS-2) and Peter Grünberg Institut (PGI-4), JARA-FIT, Forschungszentrum Jülich GmbH, Jülich, Germany — ³Peter Grünberg Institute and JARA-FIT, Forschungszentrum Jülich GmbH, Jülich, Germany — ⁴Faculty of Science, Helwan University, Cairo, Egypt

Resistive switching implies that the device can be switched between a High Resistance State (HRS) and Low Resistance State (LRS) upon application of an electric field. Fe₃O₄ emerges as a candidate for resistive switching due to the sensitivity of its magnetic and electronic properties on the presence of oxygen vacancies. Here we present the preparation and characterization of epitaxial Fe₃O₄ thin films grown on TiO₂ - terminated Nb:SrTiO₃ via pulsed laser deposition (PLD). We observe resistive switching using I-V measurements and magnetometry. We propose a mechanism in which redox reactions and the presence of oxygen vacancies are responsible for the resistive switching. This effect shows potential for next-generation magnetoionic device applications.

Keywords: Iron oxide; resistive switching; PLD; PNR; STO