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MA: Fachverband Magnetismus

MA 41: Spintronics (Other Effects)

MA 41.5: Talk

Thursday, March 21, 2024, 16:00–16:15, H 2013

Oxygen-Vacancies-Driven Resistive Switching in Epitaxial Fe3O4 Thin Films — •Yifan Xu1,2, Connie Bednarski-Meinke2, Steffen Tober2, Asmaa Qdemat2, Felix Gunkel3, Regina Dittmann3, Oleg Petracic2,1, and Mai Hussein Hamed2,41Heinrich Heine University Düsseldorf, Faculty of Mathematics and Natural Sciences, Düsseldorf, Germany — 2Jülich Centre for Neutron Science (JCNS-2) and Peter Grünberg Institut (PGI-4), JARA-FIT, Forschungszentrum Jülich GmbH, Jülich, Germany — 3Peter Grünberg Institute and JARA-FIT, Forschungszentrum Jülich GmbH, Jülich, Germany — 4Faculty of Science, Helwan University, Cairo, Egypt

Resistive switching implies that the device can be switched between a High Resistance State (HRS) and Low Resistance State (LRS) upon application of an electric field. Fe3O4 emerges as a candidate for resistive switching due to the sensitivity of its magnetic and electronic properties on the presence of oxygen vacancies. Here we present the preparation and characterization of epitaxial Fe3O4 thin films grown on TiO2 - terminated Nb:SrTiO3 via pulsed laser deposition (PLD). We observe resistive switching using I-V measurements and magnetometry. We propose a mechanism in which redox reactions and the presence of oxygen vacancies are responsible for the resistive switching. This effect shows potential for next-generation magnetoionic device applications.

Keywords: Iron oxide; resistive switching; PLD; PNR; STO

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