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MA: Fachverband Magnetismus
MA 41: Spintronics (Other Effects)
MA 41.8: Talk
Thursday, March 21, 2024, 17:00–17:15, H 2013
Interfacial Engineering of the magnetism and spin transport in two-dimensional materials — •Haichang Lu1,2, John Robertson2, Zhimei Sun3, and Weisheng Zhao1 — 1Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China — 2Engineering Department, Cambridge University, Cambridge CB2 1PZ, UK — 3School of Materials Science and Engineering, Beihang University, Beijing 100191, China
Two-dimensional (2D) materials are promising candidates for the next generation of spintronic devices as they provide flat interfaces that embed many interesting physical effects. As the device size shrinks, properties such as magnetism and spin transport are not only determined by the materials but also by the interfaces. Here, we study the interfacial effects. For example, Fe4GeTe2 is a quasi-2D ferromagnet with an intrinsic Curie temperature (TC) approaching 300K. We show that by contacting with sapphire 001 surface, the Curie temperature can rise to 530K. We also study CrTe2, another ferromagnetic metal with TC approaching room temperature. We find spin frustration happens in monolayer CrTe2, but the substrate recovered the ferromagnetism. Apart from TC, we also show that the type of interface, such as physisorbed and chemisorbed interface, pose a significant impact on the spin transport. We investigate the tunnel magnetoresistance (TMR) effect of the hexagonal boron nitride (h-BN)/Co magnetic tunnel junction. TMR with physisorbed interfaces is 1000 times higher than that of chemisorbed interfaces.
Keywords: Two-dimensional magnetic materials; first-principle calculation; magnetic tunnel junction