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MA: Fachverband Magnetismus

MA 42: Spin Transport and Orbitronics, Spin-Hall Effects II (joint session MA/TT)

MA 42.4: Talk

Thursday, March 21, 2024, 15:45–16:00, EB 107

Spin Fluctuation Enhancement of Spin Hall Effect in Low-resistive Antiferromagnet — •Chi Fang and Stuart S.P. Parkin — Max Planck Institute of Microstructure Physics, Halle (Saale) 06120, Germany

The spin Hall effect (SHE) generates a pure spin current by a charge current, which is promisingly adopted to electrically manipulate magnetization. To reduce power consumption of such control, a giant spin Hall angle (SHA) in the SHE is expected in low-resistive systems for practical applications. Low resistive antiferromagnet Chromium(Cr) is reported with remarkble SHA. Here, critical spin fluctuation near the antiferromagnetic (AFM) phase-transition in Cr is proved as an effective mechanism to further create an additional part of SHE. The SHA is significantly enhanced when temperature approaches the Néel temperature of Cr and has a peak value of -0.36 near the Néel temperature. This value is higher than the room-temperature value by 153% and leads to a low normalized power consumption among known spin-orbit torque (SOT) materials. This study demonstrates the critical spin fluctuation as a prospective way of increasing SHA and enriches the AFM material candidates for spin-orbitronic devices.

Keywords: spin Hall effect; antiferromagnet; spin fluctuation; energy-efficient device