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MA: Fachverband Magnetismus
MA 43: Magnetic Semiconductors, Magnetization Dynamics and Damping
MA 43.2: Vortrag
Donnerstag, 21. März 2024, 15:15–15:30, EB 202
Gate-Controlled Magnetic Properties of the 2D Semiconductor CrPS4 — •Nicolas Ubrig1, Fan Wu1, Ignacio Gutiérrez lezama1, Marco Gibertini2, and Alberto Morpurgo1 — 1Department of Quantum Matter Physics, University of Geneva — 2Dipartimento di Scienze Fisiche, Informatiche e Matematiche, University of Modena and Reggio Emilia
Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing transistor operation. Here, we show that exfoliated layers of CrPS4 –a 2D layered antiferromagnetic semiconductor whose bandwidth approaches 1 eV– allow the realization of FETs that operate properly down to cryogenic temperature. Using these devices, we perform conductance measurements as a function of temperature and magnetic field, to determine the full magnetic phase diagram, which includes a spin-flop and a spin-flip phase. We find that the magnetoconductance depends strongly on gate voltage, reaching values as high as 5000 % near the threshold for electron conduction. The gate voltage also allows the magnetic states to be tuned, despite the relatively large thickness of the CrPS4 multilayers employed in our study. Our results show the need to employ 2D magnetic semiconductors with sufficiently large bandwidth to realize properly functioning transistors, and identify a candidate material to realize a fully gate-tunable half-metallic conductor.
Keywords: 2D magnetic semiconductors; van der Waals magnetism; magnetotransport