Berlin 2024 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

MA: Fachverband Magnetismus

MA 46: Poster II

MA 46.68: Poster

Thursday, March 21, 2024, 15:00–18:00, Poster C

The effectiveness of spin injection from bulk Nickel into phosphorene — •Puja Kumari and Soumya Jyoti Ray — Indian Institute of Technology Patna, Bihar, India, 801106

The moderate electronic band gap and larger carrier mobility of 2D phosphorene, make it a promising candidate for future nanoelectronics. With the addition of magnetism to black phosphorene, its applications will be greatly expanded, as well as creating the possibility to design new spintronic devices. Here employing first-principles calculations, we investigate the efficiency of spin transmission from a ferromagnetic electrode (Ni) into phosphorene (P/Ni(111)). Additionally, enhance the spin injection efficiency (SIE) by replacing a single phosphorene layer with bi- and tri-layers of phosphorene. Twist engineering allows us to moderate the SIE up to 60%. To begin with, we systematically studied the structural, electronic, and magnetic properties of the P/Ni(111) junction including bi- and tri-layers of phosphorene. The mono-, bi-, and tri- layers of phosphorene on the Ni surface exhibit metallic properties upon establishing ohmic contact, demonstrating a proximity effect. After that, we have done a detailed analysis of the transport property of spin carriers with negative differential resistance. The findings of our study provide new insights into the design of phosphorene-specific spin devices.

Keywords: two dimensional; ferromagnetism; Phosphorene; spin injection; transmission