Berlin 2024 – scientific programme
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MA: Fachverband Magnetismus
MA 47: Poster III
MA 47.6: Poster
Thursday, March 21, 2024, 15:00–18:00, Poster D
Lateral Solid Phase Epitaxy of Yttrium Iron Garnet — Sebastian Sailler1, Darius Pohl2, Heike Schlörb3, Bernd Rellinghaus2, Andy Thomas3,4, Sebastian T.B. Goennenwein1, and •Michaela Lammel1 — 1Department of Physics, University of Konstanz, Konstanz — 2DCN, cfaed, TUD Dresden University of Technology, Dresden — 3Leibniz Institute of Solid State and Materials Science, Dresden — 4TUD Dresden University of Technology, Dresden
Lateral solid phase epitaxy of yttrium iron garnet (YIG) enables the fabrication of single crystalline YIG on top of non-lattice matched carrier materials and therefore the realization of single crystalline, non-planar YIG structures. We demonstrate the lateral solid phase epitaxy of YIG over an artificial edge, such that the crystallization direction is perpendicular to the initial seed. We use micropatterned SiOx mesas on top of single crystalline garnet seed substrates to study the lateral crystallization across and on top of the SiOx. We find that YIG retains the crystal orientation of the substrate not only when in direct contact with the seed garnet, but also across the edge on top of the SiOx mesa. By controlling the crystallization parameters it is possible to almost completely suppress the formation of polycrystals and to enable epitaxial growth of single crystalline YIG on top of SiOx. From a series of annealing experiments, we extract an activation energy of 2.8 eV and a velocity prefactor of 5.1×1013 nm/s for the lateral crystallization of YIG along the <100> direction. Our results pave the way to engineer single crystalline non-planar yttrium iron garnet structures with controlled crystal orientation.
Keywords: Yttrium Iron Garnet; non-planar; Sputter Deposition; Crystallization; Thin Films