Berlin 2024 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
MA: Fachverband Magnetismus
MA 52: Altermagnets
MA 52.11: Talk
Friday, March 22, 2024, 12:15–12:30, EB 202
Impacts of Crystallographic Domain Boundaries on the Electronic Properties of RuO2 — •Gina Pantano1, Eklavya Thareja1, Libor Šmejkal2,3, Jairo Sinova2, and Jacob Gayles1 — 1Department of Physics, University of South Florida, Tampa, FL USA — 2Institut für Physik, Johannes Gutenberg Universität Mainz, Mainz, Germany — 3Institute of Physics, Czech Academy of Sciences, Prague, Czech Republic
Research on interfacial phenomena in condensed matter physics has garnered significant interest due to the discovery of new properties and phases distinct from the bulk. Our work investigates novel effects that arise from crystallographic domain boundaries in the altermagnet ruthenium dioxide (RuO2). Altermagnets are characterized by having a non-relativistic momentum-dependent spin splitting comparable to ferromagnetic materials but with compensated magnetic ordering. This offers a new mechanism for controlling spin-dependent transport phenomena, such as the spin and anomalous Hall effects, based on the configuration of the crystal. We use first principle calculations to determine the orbital, atomic, and spin contributions to the electronic states at the interface. We expect the emergence of a transverse voltage parallel to the interface without spin-orbital coupling due to spin scattering and novel spin currents to develop when spin-orbit coupling is considered. Our findings will further our understanding of how altermagnetic properties evolve toward interfaces with the reduction in dimensionality and symmetry and contribute to advancements toward the design of sustainable, energy-efficient low-power devices.
Keywords: Spin Transport; Hall Effects; Altermagnetism; Crystallographic Domain Boundaries