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MA: Fachverband Magnetismus

MA 52: Altermagnets

MA 52.3: Vortrag

Freitag, 22. März 2024, 10:00–10:15, EB 202

Growth and properties of altermagnetic RuO₂/MgO/ferromagnet tunnel junctions — •Maik Gaerner, Martin Wortmann, Laila Bondzio, Inga Ennen, Karsten Rott, Timo Kuschel, Jan Schmalhorst, and Günter Reiss — Bielefeld University, Germany

Altermagnetic materials, such as RuO₂, exhibit time-reversal symmetry breaking and non-relativistic, anisotropic spin splitting in their bandstructure. Meanwhile, they also posses zero net magnetization. Therefore, these materials are promising candidates for the use in fast and robust spinelectronic devices, such as magnetic tunnel junctions (MTJs) [1,2,3].
Here, we report on the fabrication and characterization of MTJs with one altermagnetic RuO₂ and one ferromagnetic electrode. The thin films have been grown using (reactive) magnetron sputtering. Their crystallographic structure has been investigated using specular and off-specular X-ray diffraction as well as transmission electron microscopy. Afterwards, the MTJs have been patterned by electron beam lithography. In low temperature resistivity measurements, we observe a tunneling magnetoresistance which is controlled by the orientation of the magnetization of the ferromagnetic electrode. Within this contribution, we present first experimental results and give insights into MTJs with one altermagnetic electrode.

[1] L. Šmejkal et al., Phys. Rev. X 12, 031042 (2022)

[2] B. Chi et al., arXiv:2309.09561

[3] K. Samanta et al., arXiv:2310.02139

Keywords: Altermagnetism; Altermagnet; TMR; tunnel junction; RuO2