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MM: Fachverband Metall- und Materialphysik
MM 17: Poster Ib
MM 17.10: Poster
Montag, 18. März 2024, 18:30–20:30, Poster F
Disorder in electronic properties of 2D and 3D perovskites on the nanoscale — •Andrii Shcherbakov1,2, Darwin Korte1, Shangpu Liu1,2, Markus Heindl1,2, Stanislav Bodnar1,2, Jonathan Zerhoch1,2, and Felix Deschler1 — 1Physikalisch-Chemisches Institut Universität Heidelberg, Im Neuenheimer Feld 229, D-69120 Heidelberg — 2Walter Schottky Institut Technische Universität München,Am Coulombwall 4, 85748 Garching bei München
Because of outstanding semiconducting properties like high quantum yield, tuneability, and potential to form quantum confined systems, organic-inorganic hybrid perovskites have proved themselves as attractive candidates for various optoelectronic applications, including efficient photodetectors, light emitting diodes and solar cells. Local electronic properties affected by the disorder caused by strain, defects, and differences in confinement have a direct influence on the optical properties and the device's performance. By studying the types of such inhomogeneities, their influence on key semiconducting properties, and their dependence on the fabrication process, we can adjust the latter to achieve the best performances. Here, we start investigating our test materials with the means of confocal (circular) photoluminescence spectroscopy, allowing to study disorder on the microscale. By further employing nearfield nanoscopy, we achieve spatially resolved material response with a resolution below the diffraction limit. Finally, we find a correlation between the fabrication conditions and the disorder, suggesting us ways of increasing the performance of the product material.
Keywords: SNOM; Nearfield; Perovskite; Disorder; Low dimensional material