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MM: Fachverband Metall- und Materialphysik
MM 17: Poster Ib
MM 17.16: Poster
Montag, 18. März 2024, 18:30–20:30, Poster F
Direct visualization of electric current induced dipoles of atomic impurities — •Yaowu Liu1,2, Zichun Zhang1, Sidan Chen1, Shengnan Xu1, Lichen Ji1, Wei Chen1, Xinyu Zhou1, Jiaxin Luo1, Xiaopeng Hu1, Wenhui Duan1, Xi Chen1, Qikun Xue1,3,4,5, and Shuaihua Ji1,5 — 1State Key Laboratory of Low-Dimensional Quantum Physics, Department of physics, Tsinghua University, Beijing 100084, China — 2Center for Quantum Nanoscience, (IBS), Seoul 30760, Republic of Korea — 3Beijing Academy of Quantum Information Sciences, Beijing 100193, China — 4Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China — 5Frontier Science Center for Quantum Information, Beijing 100084, China
Learning electron scattering around atomic impurities is vital for comprehending the basic electronic transport phenomena. Despite many efforts in the past several decades, atomic scale transport around single point-like impurities has yet been achieved. Here, we report the direct visualization of the electric current induced dipoles around single atomic impurities in epitaxial bilayer graphene [arXiv:2309.01182]. We find the directions of these dipoles are determined by the charge polarity of the impurities, revealing the direct evidence for the existence of the carrier density modulation effect proposed by Landauer in 1976 [Phys.Rev.B 14,1474 (1976)]. Furthermore, by in situ tuning local current directions, these dipoles are redirected correspondingly. Our work paves the way to explore the quantum transport phenomena at single atomic impurity level.
Keywords: Carrier density modulation effect; Residual resistivity dipole; Scanning tunneling potentiometry