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MM: Fachverband Metall- und Materialphysik

MM 22: Interface Controlled Properties, Nanomaterials and Microstructure Design III

MM 22.1: Vortrag

Dienstag, 19. März 2024, 10:15–10:30, C 230

Strain engineering for CMOS microelectronics — •Costanza Manganelli¹, Ignatii Zaitsev¹, Agnieszka Anna Corley-Wiciak¹, Cedric Corley-Wiciak², Marvin Hartwig Zoellner¹, Carsten Richter³, Edoardo Zatterin², Michele Virgilio⁴, Beatriz Martin-Garcia⁵, and Davide Spirito¹ — ¹IHP Leibniz-Institut für innovative Mikroelektronik, Frankfurt (Oder), Germany — ²ESRF -European Synchrotron Radiation Facility, Grenoble, France — ³IKZ -Leibniz -Institut für Kristallzüchtung, Berlin, Germany — ⁴Università di Pisa, Pisa, Italy — ⁵CIC nanoGUNE BRTA & IKERBASQUE, Basque Country, Spain

The significance of strain engineering in CMOS microelectronics extends across diverse applications, encompassing opto-electronics, sensing, and quantum technologies, and a variety of materials from SiGeSn semiconductors to 2D materials (MoS2, hBN and perovskites). Experimental analyses (Photoluminescence, Raman, X-Ray Spectroscopy) and simulation platforms enable the prediction and optimization of material processes and device design. We present a systematic study elucidating how the temperature-dependent distribution of strain can impact the optical and transport performance of semiconductor devices. Our investigation focuses on strained Ge microdisks, crucial components for developing guidelines for integrated light emitters. We also explore the role of metal electrodes in quantum confinement buses within CMOS-compatible devices. This research provides valuable insights into strain effects on semiconductor devices, laying a foundation for developing and optimizing future microelectronic devices.

Keywords: strain engineering; bandstructure; Raman; Photoluminescence