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MM: Fachverband Metall- und Materialphysik

MM 22: Interface Controlled Properties, Nanomaterials and Microstructure Design III

MM 22.2: Vortrag

Dienstag, 19. März 2024, 10:30–10:45, C 230

A theoretical analysis on the bulk photovoltaic effect in strained germanium microstructures — •Ignatii Zaitsev¹, Davide Spirito¹, Jacopo Frigerio², Carlos Alvarado Chavarin¹, Michele Virgilio³, Anke Lüdge⁴, Wolfgang Lüdge⁴, Raffaele Giani², and Costanza Lucia Manganelli¹ — ¹IHP - Leibniz-Institut für innovative Mikroelektronik, Frankfurt (Oder), Germany — ²L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo Di Como, Italy — ³Università di Pisa, Pisa, Italy — ⁴LPCon GmbH, Berlin, Germany

Strain engineering in microstructures is a powerful tool for optimization of electronic and optical properties in semiconductor devices. We propose a proof of concept for the development of a cost-effective, compact, fast, and non-destructive approach to probe non-uniform strain fields in semiconductors, exploiting the bulk photovoltage effect. We show a benchmark case represented by an array of silicon nitride stripes deposited at different pressure conditions on a germanium substrate. First, we verify their surface deformations by means of Raman spectroscopy; secondly, we reproduce that in a finite element method simulation platform by combining mechanical simulations with deformation potential theory to then estimate the band edge energy landscape. Finally, we discuss theoretical behavior of the photovoltage signal based on the semiconductor sample characteristics such as defects and doping as well as deformation.

Keywords: Electronic band structure; Semiconductor materials; Strain measurement; Finite-element analysis; Photovoltaic effects