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MM: Fachverband Metall- und Materialphysik
MM 24: Transport in Materials: Diffusion, Conduction of Charge or Heat II
MM 24.1: Vortrag
Dienstag, 19. März 2024, 11:45–12:00, C 264
Towards Highly Conductive Graphite Films: Tungsten Carbide Doping of Thermally Reduced Graphene Oxide Paper — •Leonhard Niemann1,2, Tianshan Xu1,3, Markus Gruschwitz2, Martin Köhne1, and Christoph Tegenkamp2 — 1Robert Bosch GmbH, Department of Advanced Technologies and Micro Systems, 71272 Renningen — 2Technical University of Chemnitz, Institute of Physics, 09107 Chemnitz — 3RWTH Aachen, Gemeinschaftslabor für Elektronenmikroskopie GFE, 52062 Aachen
The growth of consumer electronics and the electrification of transport has increased enormously the demand for copper. This will lead to a global shortage of this element. Graphene-based conductors are an interesting lightweight and low-cost alternative. However, the electrical conductivity values achieved to date are not sufficient to compete with traditional copper-based conductors. To increase the electrical conductivity, various additives are under research. This study delves into the synergistic effects of tungsten carbide (WC) doping on the graphitization process of graphene oxide (GO) films. Tungsten, a well-known catalyst for promoting graphitization in amorphous carbon structures, holds promise for advancing the properties of graphene-based materials. We focused on optimizing the concentration of W to facilitate the graphitization of GO films. The samples were subjected to controlled thermal treatments, and their structural evolution was characterized. The resulting WC/graphite films with a conductivity of 432 to 594 kS/m demonstrate a concentration-dependent effect, with an optimal concentration range of 1 to 3 µmol/mg of WS2 in GO.
Keywords: Graphite; Carbide; highly conductive; graphene oxide