Berlin 2024 – wissenschaftliches Programm

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MM: Fachverband Metall- und Materialphysik

MM 29: Poster II

MM 29.21: Poster

Dienstag, 19. März 2024, 17:00–19:00, Poster B

An effective supramolecular Ni(II)-metallohydrogel based non-volatile memory device with excellent endurance — •Arpita Roy and Soumya Jyoti Ray — Department of Physics, Indian Institute of Technology Patna, Bihar-801106, India

Supramolecular gels are versatile materials that possess "smart" properties. They are used in various industries such as sensors, cosmetics, foods, nanoelectronics, logic gates and regenerative medicine. In this work, we have developed a well-organized and efficient method to rapidly synthesize a supramolecular metallohydrogel of Ni(II)-ion which is known as NiA-TA, has been established under ambient temperature and pressure. This metallohydrogel is prepared by using benzene-1,3,5-tricarboxylic acid as a low molecular weight gelator (LMWG) dissolved in DMF solvent at room temperature. Here, we have fabricated Schottky diode structures with a metal-semiconductor-metal geometry based on the nickel(II) metallogel (NiA-TA) to observe charge transport behavior. Remarkably, we have also developed NiA-TA based resistive random access memory1 (RRAM) device which shows bipolar resistive switching behavior at room temperature. This RRAM device shows an excellent ON/OFF ratio (~110) which is measured from endurance test upto 5000 switching cycles. These structures hold tremendous potential for a wide range of applications, including non-volatile memory design, neuromorphic computing, flexible electronics, and optoelectronics device.

Keywords: Metallohydrogel; Non-volatile memory device; Resistive switching; Neuromorphic computing; Optoelectronics Device