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MM: Fachverband Metall- und Materialphysik

MM 29: Poster II

MM 29.26: Poster

Dienstag, 19. März 2024, 17:00–19:00, Poster B

Electron Beam Induced Currents: First Results from In-Situ Biasing S/TEM Experiments — •Kai-Luis Jakob, Santiago Koloffon, Frederik Otto, Hüseyin Çelik, Simon Gaebel, Tolga Wagner, Laura Niermann, Tore Niermann, and Michael Lehmann — TU Berlin

The main functionality of a plethora of electronic devices (e.g., solar cells or transistors) is based on p-n junctions, many of which are operated under an applied bias voltage. The behavior of such junctions in bulk material is well described by considering charge distributions at the interface. For thin samples, as one would typically investigate in a transmission electron microscope (TEM), these models break down as surface effects, such as preparation induced defects, become more dominant in comparison with a thin bulk core of such a sample. In this work, we show that contributions of the sample´s surface, such as enhanced electron-hole recombination probabilities, must be considered when observing electric devices in a TEM under bias. Furthermore, by comparing electron beam induced currents to nanometer scale measurements of carrier concentrations, both of which can be acquired simultaneously in a scanning transmission electron microscope, we demonstrate a pathway to future quantitative understanding of device behavior at such small scales under reverse bias.

Keywords: Biasing; S/TEM; Beam Induced Currents; In-Situ; p-n junction