Berlin 2024 – scientific programme
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MM: Fachverband Metall- und Materialphysik
MM 47: Poster DS (joint session DS/MM/O)
MM 47.8: Poster
Wednesday, March 20, 2024, 17:00–19:00, Poster B
Experimental setup for gas sensing with TMD based field-effect devices — •Axel Printschler1, Emad Najafidehaghani1, Antony George1, Hamid Reza Rasouli1, David Kaiser1, Uwe Hübner2, and Andrey Turchanin1 — 1Friedrich Schiller University Jena, Institute of Physical Chemistry, Jena — 2Leibniz Institute of Photonic Technology (IPHT), Jena
Sensing devices based on 2D transition metal dichalcogenides (TMDs) such as MoS2, WS2, MoSe2, WSe2, etc. have attracted significant research interest, as their electronic properties are greatly influenced by variations in the environment, e.g., due to formation of adsorbates. This influence is reflected in changes of the device’s electric transport characteristics, which can be precisely measured and used for gas sensing. As toxic gases pose a threat in many fields, there is a high demand in sensitive, selective and flexible gas sensors that also work at low power. Electronic sensors based on TMDs can satisfy this need while being atomically thin and flexible. Here we present an experimental setup and first results on gas sensing with field effect transistors (FETs) fabricated from TMD monolayers grown by chemical vapor deposition (CVD).
Keywords: Gas Sensing; TMDs; 2D materials; CVD; FETs