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MM: Fachverband Metall- und Materialphysik

MM 59: Focus Session: 2D Transition Metal Carbides, Nitrides and Carbonitrides III (joint session DS/MM/O)

MM 59.7: Vortrag

Donnerstag, 21. März 2024, 17:15–17:30, A 053

Non-Covalent Functionalized Schottky Interface at Ti3C2Tx/c-Si Van der Waals Heterojunction — •Eloi Ros Costals, Sergio Giraldo, Marcel Placidi, Cristobal Voz, Joaquim Puigdollers, Edgardo Saucedo, Zacharie Jehl Li Kao, and Kunal Tiwari — Electronics Engineering Department, Polytechnic University of Catalunya (UPC), Barcelona Spain

Synergistic interaction between 2D materials and organic molecules presents an additional dimension for tuning their intrinsic properties. Herein, we aim to finely tune the work function of 2D Ti3C2Tx MXene by introducing ultrathin interlayers of organic dipoles (O.D.) with a defined dipole moment value. Interface engineering is achieved through the inclusion of poly(ethylene)amine (PEI 0.1%) and third generation poly(amido-)amine (PAMAM G3), between the Ti3C2TX and c-Si. Charge transport properties of the fabricated Schottky diodes with a structure of c-Si/O.D./Ti3C2TX were evaluated through systematic analysis of the I-V and C-V characteristics. Our investigations reveal that diodes featuring O.D. as interlayers exhibit substantially reduced reverse saturation current density (J0) and enhanced built-in potential (Vbi). We also report a significant reduction in the work function value of Ti3C2Tx from 5.8 eV to 4.2 eV for Ti3C2Tx/PEI 0.1% and 3.3 eV for Ti3C2Tx/PAMAM-G3 heterostructures. On the basis of inferences drawn from photoemission spectroscopy we ascribe this to formation of oriented interfacial dipoles at the Ti3C2Tx/O.D. interface. Our study introduces an innovative approach for precisely controlling the work function of Ti3C2Tx through the incorporation of O.D.