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O: Fachverband Oberflächenphysik

O 109: Focus Session: Proximity Effects in Epitaxial Graphene II

O 109.3: Talk

Friday, March 22, 2024, 11:15–11:30, MA 141

Shaping superconducting proximity effect on graphene with nanometric precision — •Stefano Trivini1, Eva Cortès-del Rio6, Tim Kokkeler9, Jon Ortuzar1, Vladimir Cherkez3,4, Jean-Yves Veuillen3,4, Pierre Mallet3,4, F. Sebastian Bergeret8,9, Juan Carlos Cuevas5,6, Ivan Brihuega6,5,7, and Nacho Pascual1,21CICnanoGUNE 20018 San Sebastián, Spain — 2Ikerbasque, 48013 Bilbao, Spain — 3Institut Néel, F-38400 Grenoble, France. — 4Universitè Grenoble Alpes, F-38042 Grenoble, France. — 5IFIMAC, E-28049 Madrid, Spain. — 6UAM, E-28049 Madrid, Spain. — 7Instituto Nicolás Cabrera E-28049 Madrid, Spain — 8DIPC 20018 San Sebastian, Spain — 9CFM-MPC, E-20018 San Sebastián, Spain

Graphene can be turned superconducting by the proximity effect. The role of graphene gate-tunable density of states is crucial for understanding the stabilization of a collective proximitized state. Here, we investigate the proximitized superconductivity in graphene bilayers in contact with Pb islands grown on top. In particular, we compare, using LT-STM, the effect of superconducting Pb on graphene grown on the two faces of a polar SiC(1000) crystal. The effect of surface DOS turns out to be crucial. On the Si-side, we identify a collective superconducting state with a small pseudogap, while in the C-side, superconductivity is strong but local. Furthermore, we developed a method to laterally manipulate the Pb islands on graphene and build controllable Superconductor-Graphene structures.

Keywords: superconductivity; graphene; spectroscopy; STM; proximity

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