Berlin 2024 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 12: 2D Materials I: Electronic Structure (joint session O/TT)
O 12.4: Vortrag
Montag, 18. März 2024, 15:45–16:00, MA 005
Charge State-Dependent Symmetry Breaking of Atomic Defects in Transition Metal Dichalogenides — •Lysander Huberich1, Feifei Xiang1, Jonas Allerbeck1, Preston A. Vargas2, Riccardo Torsi3, Anne Marie Tan2, Pascal Ruffieux1, Roman Fasel1, Oliver Gröning1, Yu-Chuan Lin3, Richard Henning2, Joshua Robinson3, and Bruno Schuler1 — 1Empa - nanotech@surfaces Laboratory, 8600 Dübendorf, Switzerland — 2University of Florida, Gainesville, FL, 32611, USA — 3The Pennsylvania State University, University Park, PA, 16802, USA
The electronic properties of atomically thin 2D materials are strongly influenced by occuring atomic defects and their interaction with the host lattice. Here we report on the direct imaging of charge state-dependent symmetry breaking of single rhenium dopants (ReMo) and negatively charged sulfur vacancies (VacS−) in mono- and bilayer MoS2 by atomically-resolved STM and nc-AFM. While VacS− occur in both the symmetric and the symmetry-broken state, ReMo exhibit charge-dependent symmetry breaking stabilized by the difference in substrate workfunction. The local lattice distortions and symmetry-broken defect orbitals of VacS− as well as ReMo0 and ReMo−1 are attributed to the (pseudo-)Jahn-Teller effect. By mapping of electronic orbitals and geometric structures, we can disentangle effects of spatial averaging, charge multistability, configurational dynamics, and external perturbations that often mask the presence of local symmetry breaking. [Xiang, Huberich, et al., arXiv:2308.02201]
Keywords: Defects in 2D Materials; Jahn-Teller Effect; Symmetry-Breaking; Scanning Probe Microscopy; MoS2