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O: Fachverband Oberflächenphysik

O 17: Semiconductor Substrates II: Structure, Epitaxy, Growth

O 17.1: Vortrag

Montag, 18. März 2024, 15:00–15:15, MA 144

Bimodal Growth of Fe islands on graphene — •Yisheng Gu — Shanghai Jiao Tong University, Shanghai, China

Nucleation of different materials on graphene may improve our cognizing of further application of graphene related systems, among which the combinations of graphene and magnetic materials are promising in spin related technics. We have prepared Fe islands on epitaxial graphene on SiC by molecular beam epitaxy, and then directly examine the topography by scanning tunneling microscope. At room temperature, Fe forms cluster. However, by annealing at relatively high temperature, Fe flat islands and Fe polyhedrons arise. The electronic states with certain patterns that differs from normal lattice are detected on top of the flat islands. This difference of Fe topography between room temperature growth and relatively high temperature annealing may be generalized to deposition of other metals on graphene.

Keywords: Molecular Beam Epitaxy; Scanning Tunneling Microscope; Graphene; Iron; Magnitism