Berlin 2024 – scientific programme
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O: Fachverband Oberflächenphysik
O 17: Semiconductor Substrates II: Structure, Epitaxy, Growth
O 17.2: Talk
Monday, March 18, 2024, 15:15–15:30, MA 144
Local GaAs growth on patterned Si(001) surfaces by Laser-assisted MOVPE — •Christian Bruckmann, Jürgen Bläsing, Armin Dadgar, and André Strittmatter — Institut für Physik, Otto-von-Guericke-Universität Magdeburg, PF4120 Magdeburg, Germany
Monolithic integration of group III-V compound semiconductors on a silicon-based platform is the ultimate solution for combining optoelectronics based on compound semiconductors with Si-based integrated circuit technology. Heteroepitaxy of group III-V semiconductors on Si wafers is a common approach as it facilitates large-scale production. However, for the realization of complex networks by implementing different high performance devices on the same chip a local growth approach of III-V-compound semiconductors can be a viable path to achieve cost-effective monolithic integration. The newly developed Laser-assisted Metal Organic Vapor Phase Epitaxy features local heating via high-power laser radiation enabling controllable local epitaxial growth1. In order to improve the crystalline quality of GaAs islands, the local growth is now performed on patterned Si(001)-wafers. In addition n-/p-type doping of GaAs-based structures is also presented.
1M. Trippel et al., "Laser-assisted local metal-organic vapor phase epitaxy", Rev. Sci. Instrum. 93, 113904 (2022)
Keywords: MOVPE; Heteroepitaxy; Local Epitaxial Growth; GaAs