Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 17: Semiconductor Substrates II: Structure, Epitaxy, Growth

O 17.3: Vortrag

Montag, 18. März 2024, 15:30–15:45, MA 144

Growth of vanadium on Si(111) — •Dang Liu — School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China

Vanadium is a type-II superconductor with a Tc=5.3 K. Due to its high melting temperature, it is difficult to grow Vanadium material by thermal evaporation. We use molecular beam epitaxy method to deposit Vanadium on silicon substrate, and then characterized by low temperature scanning tunnelling microscope. Vanadium islands with many facets are successfully grown on Si(111) with ultra-high substrate temperature. The lateral dimensions of Vanadium islands are from dozens to several hundred nanometers, and their heights are around several tens of nanometers. Atomic images of different facets are obtained by constant current mode of STM. We also get scanning tunneling spectroscopy on the surface of vanadium island, and a small gap shows around zero bias, which is a signal of superconductivity.

Keywords: vanadium; superconductor; silicon; MBE; STM