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O: Fachverband Oberflächenphysik
O 17: Semiconductor Substrates II: Structure, Epitaxy, Growth
O 17.6: Vortrag
Montag, 18. März 2024, 16:15–16:30, MA 144
Atomic structure of As-modified Si(100) surfaces prepared in MOCVD ambience utilizing background arsenic — Chris Yannick Bohlemann1, Agnieszka Paszuk1, Manali Nandy1, Aaron Flötotto2,3, Max Großmann2,3, Oleksandr Romanyuk4, •Kai Daniel Hanke1, Peter Kleinschmidt1, Erich Runge2,3, and Thomas Hannappel1 — 1TU Ilmenau, Institute of Physics, Fundamentals of Energy Materials — 2TU Ilmenau, Institute of Physics,Theoretical Physics I — 3TU Ilmenau, Centre of Micro- and Nanotechnologies — 4Institute of Physics, Academy of Sciences of the Czech Republic, 182 00 Prague 8
A low-defect III-V nucleation layer and a well-defined atomically abrupt interface between the Si(100) substrate and the III-V nucleation layer are essential prerequisites for subsequent low-defect III-V layer growth. Preparation of a well-ordered Si(100) surface in industrially-relevant MOCVD ambience with arsenic benefits in a significant temperature reduction during the deoxidation step. In this study, we investigate the atomic structure of Si(100) surfaces prepared in As-rich MOCVD reactor, employing background arsenic as the arsenic source. The preparation of the samples in the MOCVD reactor was monitored in situ by surface sensitive optical spectroscopy and the surfaces were characterized in UHV by FTIR and STM. The measurements are supported by complementary DFT calculations. We confirm presence of hydrogen on the surface and mixed As-Si-H dimers, which was previously unrecognized.
Keywords: surface preparation; MOCVD; FTIR; Silicon; III-V