O 17: Semiconductor Substrates II: Structure, Epitaxy, Growth
Montag, 18. März 2024, 15:00–17:00, MA 144
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15:00 |
O 17.1 |
Bimodal Growth of Fe islands on graphene — •Yisheng Gu
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15:15 |
O 17.2 |
Local GaAs growth on patterned Si(001) surfaces by Laser-assisted MOVPE — •Christian Bruckmann, Jürgen Bläsing, Armin Dadgar, and André Strittmatter
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15:30 |
O 17.3 |
Growth of vanadium on Si(111) — •Dang Liu
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15:45 |
O 17.4 |
In-situ analysis of phase transitions in ultrathin nickel silicides by time-of-flight medium energy ion scattering — •Carolin Frank, Kevin Vomschee, Radek Holeňák, Eleni Ntemou, and Daniel Primetzhofer
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16:00 |
O 17.5 |
The contribution has been withdrawn.
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16:15 |
O 17.6 |
Atomic structure of As-modified Si(100) surfaces prepared in MOCVD ambience utilizing background arsenic — Chris Yannick Bohlemann, Agnieszka Paszuk, Manali Nandy, Aaron Flötotto, Max Großmann, Oleksandr Romanyuk, •Kai Daniel Hanke, Peter Kleinschmidt, Erich Runge, and Thomas Hannappel
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16:30 |
O 17.7 |
Towards an ab initio kinetic Monte Carlo model for the growth of β-Ga 2 O 3 (100) — •Qaem Hassanzada, Konstantin Lion, Claudia Draxl, and Matthias Scheffler
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16:45 |
O 17.8 |
The contribution has been withdrawn.
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