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O: Fachverband Oberflächenphysik

O 29: Poster: 2D Materials

O 29.5: Poster

Dienstag, 19. März 2024, 12:30–14:30, Poster A

Facile chemical vapor deposition growth of transition metal dichalcogenide alloy lateral heterostructures for electronic and optoelectronic applications — Seung Heon Han¹, Gia Quyet Ngo², Moritz Quincke³, Emad Najafidehaghani¹, •Christof Neumann¹, Uwe Hübner⁴, Ute Kaiser³, Falk Eilenberger^2,5, Antony George¹, and Andrey Turchanin¹ — ¹Institute of Physical Chemistry, Friedrich Schiller University Jena, 07743 Jena — ²Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, 07745 Jena — ³Central Facility of Electron Microscopy, Ulm University, 89081 Ulm — ⁴Leibniz Institute of Photonic Technology (IPHT), 07745 Jena — ⁵Fraunhofer-Institute for Applied Optics and Precision Engineering IOF, 07745 Jena

Lateral heterostructures (LH) of monolayer transition metal dichalcogenides (TMDs) such as MoS₂, WSe₂ are known for their high potential for the integration in ultrathin device technology as p-n junction diodes and photodetectors. While the properties of pure TMDs are noteworthy, the development of alloy TMDs (e.g., Mo_xW_(1−x)S₂ etc.) adds a new dimension to the research on 2D semiconductors. Alloy TMDs allow for the fine-tuning of their intrinsic electronic properties, thereby expanding the spectrum of potential applications. Here we present the growth of monolayer alloy LHs by CVD employing liquid precursors of transition metals. We characterized the synthesized material by AFM, Raman spectroscopy, HRTEM, as well as, PL spectroscopy and studied their performance in optoelectronic devices.

Keywords: 2D Materials; Lateral Heterostructure; CVD; Optoelectronic; Transition metal dichalcogenide