Berlin 2024 – scientific programme
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O: Fachverband Oberflächenphysik
O 30: Poster: Proximity Effects in Epitaxial Graphene
O 30.4: Poster
Tuesday, March 19, 2024, 12:30–14:30, Poster A
Intercalation of Pb using buffer layer on 4H/SiC(0001) — •Sergii Sologub1,2, Markus Gruschwitz2, and Christoph Tegenkamp2 — 1Institute of Physics, NAS of Ukraine, Nauki avenue 46, 03028 Kyiv — 2Institut für Physik, TU Chemnitz, Reichenhainer Str. 70, 09126 Chemnitz
Charge neutrality [1] as well as potential superconductivity [2] and induced SOC of epigraphene by Pb intercalation recently sprouted great interest. We investigated the peculiarities of the intercalation of Pb using buffer layer on 4H/SiC(0001) by SPA-LEED, SEM and STM techniques. Although proposed as an energetically unfavorable process [3], we optimize the intercalation by varying the coverage of deposited Pb, annealing temperature and duration, as well as numbers of deposition-annealing cycles. In particular, repeated cycles of 10 ML Pb-deposition at RT followed by annealing to 500°C for 5 min were effective for the formation of the stripe intercalation phase, especially with additional annealing to 700°C in every two cycles. On the other hand, the long-term annealing (about 15 hours at 350°C) of the 20 ML Pb coverage deposited on the stripe-phase substrate resulted in transformation of the stripe phase into the bubble one which was accompanied by corresponding changes in STM images and LEED patterns. Also of importance is that residual Pb clusters remaining on the surface after the intercalation processes can be mainly removed by annealing to 400°C.
[1] Adv. Mater. Interfaces 10, 2300471 (2023); [2] Nat. Phys. 6, 104 (2010); [3] Carbon 205, 336 (2023)
Keywords: epitaxial graphene; intercalation; lead