Berlin 2024 – scientific programme
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O: Fachverband Oberflächenphysik
O 35: Poster: Surface Reactions
O 35.7: Poster
Tuesday, March 19, 2024, 18:00–20:00, Poster C
Experimental investigation of GaInP(100) surfaces exposed to H2O — •David Ostheimer1, Christian Dreßler2, Mohammad Amin Zare Pour1, Sahar Shekarabi1, Max Großmann3, Agnieszka Paszuk1, and Thomas Hannappel1 — 1TU Ilmenau, Grundlagen von Energiematerialien, Ilmenau, Deutschland — 2TU Ilmenau, Theoretische Festkörperphysik, Ilmenau, Deutschland — 3TU Ilmenau, Theoretische Physik I, Ilmenau, Deutschland
Despite GaInP being employed in photoelectrochemical devices with world-record efficiencies, stability remains a significant challenge. A detailed understanding of the reactions at the semiconductor/electrolyte heterointerface is crucial to tailor the semiconductor surface appropriately to avoid losses of the photogenerated charge carriers and to reduce corrosion. As a first step, we investigate the interaction of phosphorous-rich (P-rich) and group-III-rich-GaInP(100) surfaces, with water vapor. Our analysis reveals that the initial surface reconstruction of GaInP(100) has a significant effect on the interaction with water. The P-rich GaInP(100) surface showed minimal alteration following exposure to 300 kL of water vapor. In contrast, the group-III-rich surface exhibits no RAS anisotropy after exposure. XPS measurements indicate a reduction of In-In- bonds, and that the initial pathway toward oxidation mainly involves the hydroxylation of these dimers, which subsequently leads to a formation of InOx species. Both findings could be further confirmed by ab-initio Born-Oppenheimer molecular dynamic simulations with 0.5 fs timesteps and 30 ps total simulation time for each system.