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O: Fachverband Oberflächenphysik

O 36: Poster: Ultrafast Electron Dynamics at Surfaces and Interfaces

O 36.7: Poster

Dienstag, 19. März 2024, 18:00–20:00, Poster C

Towards femtosecond momentum microscopy of field-effect gated transition metal dichalcogenides — •Bent van Wingerden, Jan Philipp Bange, Jonas Pöhls, Wiebke Bennecke, David Schmitt, Daniel Steil, Gijsbert Simon Matthijs Jansen, Thomas Weitz, Marcel Reutzel, and Stefan Mathias — 1. Physikalisches Institut, Georg-August Universität Göttingen, Göttingen, Germany

2D-materials have received great attention due to their astounding optical and electronic properties. Several degrees of freedom (DoF) result in extensive phase diagrams and reveal manifold possibilities for applications in spin-, valley- and optoelectronics. To yield applications in technology, control over these DoF has to be established. Our goal is to study the effect of charge carrier doping by field-effect gating on the band structure and ultrafast exciton dynamics of TMDs in time-resolved momentum microscopy. Previous experimental work visualized the impact of field-effect doping on the electronic band structure for graphene and WSe₂, utilizing static µARPES endstations at synchrotrons [Nguyen et al. Nature 572 (2019)]. Here, we will discuss our efforts to study gated 2D-materials with our laboratory based experiment that combines a time-of-flight momentum microscope with a high-repetition rate HHG-beamline [Keunecke et al., Rev. Sci. Ins. 91, 063905 (2020)]. This approach will facilitate the study of ultrafast exciton dynamics and may lead to the discovery of novel relaxation dynamics [Schmitt et al., Nature 608, 499 (2022)].