Berlin 2024 – scientific programme
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O: Fachverband Oberflächenphysik
O 49: Oxide and Insulator Interfaces I
O 49.4: Talk
Wednesday, March 20, 2024, 11:15–11:30, MA 144
Atomic layer deposition of cerium oxide monitored by operando ellipsometry and in-situ X-ray photoelectron spectroscopy — •Rudi Tschammer1, Yuliia Kosto1, Carlos Morales1, Marcel Schmickler2, Karsten Henkel1, Anjana Devi2, and Jan Ingo Flege1 — 1Applied Physics and Semiconductor Spectroscopy, BTU Cottbus-Senftenberg, Cottbus, Germany — 2Inorganic Materials Chemistry, Ruhr University Bochum, Universitätsstraße 150, Bochum, Germany
Atomic layer deposition (ALD) has been used extensively to grow homogeneous films with excellent coverage and atomic-scale thickness control for a variety of applications. However, remaining challenges include the investigation of novel precursor-oxidant combinations for low-temperature deposition as well as unraveling the complex interplay between substrate and coating for ultrathin films. In this work, we present a detailed investigation of ultrathin cerium oxide films grown using the novel Ce(dpdmg)3 precursor with H2O and O2. Following a surface science-based approach, we have combined operando spectroscopic ellipsometry and in-situ X-ray photoelectron spectroscopy to allow rapid process optimization and determination of the complex relation between oxide stoichiometry, film thickness and ALD growth parameters, revealing a distinct dependence of inital Ce3+ content on the film thickness and choice of oxidant. This offers the possibility of adjusting the oxide properties to application requirements e.g. in gas sensing by choosing a suitable precursor-oxidant combination.
Keywords: cerium oxide; ALD; XPS; spectroscopic ellipsometry