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O: Fachverband Oberflächenphysik
O 54: Scanning Probe Microscopy: Light Matter Interaction at Atomic Scales I
O 54.4: Vortrag
Mittwoch, 20. März 2024, 16:00–16:15, MA 041
Efficient and continuous THz carrier-envelope phase control for ultrafast lightwave-driven STM — •Jonas Allerbeck1, Joel Kuttruff2, Laric Bobzien1, Lysander Huberich1, Maxim Tsarev2, and Bruno Schuler1 — 1nanotech@surfaces, Empa, Swiss Federal Laboratories for Material Science and Technology, Überlandstrasse 129, 8600 Dübendorf Switzerland — 2University of Konstanz, Universitätsstrasse 10, 78464 Konstanz, Germany
THz lightwave-driven scanning tunneling microscopy (THz-STM) facilitates the study of atomically precise structures with sub-cycle picosecond temporal resolution, leveraging the fundamental understanding of quantum systems and carrier dynamics at the nanoscale. Here, I present a versatile THz-STM toolbox, operating at up to 41 MHz repetition rate and using an efficient method to continuously control the carrier-envelope phase of single-cycle THz pulses, established by frustrated internal reflection in a right-angle polymer prism. The setup achieves peak THz voltages at the tunneling junction ranging from 1 V at 41 MHz to few-10 V at 1 MHz, where multi-MHz repetition rates enable state-selective tunneling to localized orbital states of atomic quantum defects below 0.01 electrons per THz pulse. Photoemission sampling and lightwave-driven THz cross correlation benchmark the near-field THz amplitude. We study atomic point defects in few-monolayer transition metal dichalcogenide epitaxial crystals, featuring few-ps charge state lifetime. The precise control of the transient THz waveform at the tunneling junction paves the way towards exploring local carrier dynamics with atomic resolution.
Keywords: Ultrafast scanning probe microscopy; THz-STM; field-driven tunneling; photoemission sampling; near-field waveform