Berlin 2024 – scientific programme

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O: Fachverband Oberflächenphysik

O 63: Poster DS (joint session DS/MM/O)

O 63.4: Poster

Wednesday, March 20, 2024, 17:00–19:00, Poster B

Focused-Ion-Beam induced Defect Emission in Hexagonal Boron Nitride — •Felix Schaumburg, Dominik Kaczmarek, David Plitt, Martin Geller, Günther Prinz, and Axel Lorke — Faculty of Physics, University of Duisburg-Essen and CENIDE, Germany

Defects in the wide bandgap material hexagonal boron nitride (hBN) exhibit single-photon emission at room temperature (RT) [1]. We used the gallium ion beam of a focused ion beam (FIB) to generate ensembles of defects that we associated with boron vacancies having a photoluminescence emission exceeding 800 nm [2]. After irradiation isolated point defects can also be found next to the irradiated areas. We show that our created defects exhibit a bright RT emission, an almost sublinear power dependence commonly associated with a two-level system and an increasing signal, a decreasing full with at half maximum (FWHM), and a minimal shift to lower wavelengths at lower temperatures. Our results show, that we can generate bright emitters in hBN by Ga-ion treatment that are in a wavelength range of up to 800 nm. Our next goals will be contacting these emitters by putting a gate structure on top of it, as well as creating single defects at higher wavelengths. [1] F. Hayee et.al., Nat.Mater.19 (2020) [2] C. Qian et.al., arXiv (2022)

Keywords: Quantum Emitter; hBN; Defect; Single Photon Emitter; 2D Materials