Berlin 2024 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 67: Poster: Oxide, Insulator and Semiconductor Surfaces
O 67.8: Poster
Mittwoch, 20. März 2024, 18:00–20:00, Poster C
Adsorption of methanol on Si(001) revisited: alternative reaction pathways at increased surface temperature — •Sophie Göbel1, Timo Glaser1, Gustav Nolte1, Denys Jockel1, Christian Länger1, Julian Heep1, Hendrik Weiske2, Jan-Niklas Luy2, Ralf Tonner-Zech2, and Michael Dürr1 — 1Institut für Angewandte Physik and Zentrum für Materialwissenschaften, Justus-Liebig-Universität Giessen, Germany — 2Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Universität Leipzig, Germany
Molecular electronics is seen as a possibility to advance semiconductor technology beyond Moore's law. With silicon as the technologically most important substrate, understanding the interaction between organic molecules and silicon surfaces is crucial for tailoring the properties of the required organic/inorganic interfaces. While low energy pathways have been extensively studied in the past, our research focuses on the question if channels with higher barriers can be addressed at higher surface temperatures. In this context, we studied the binding of methanol, the simplest alcohol, on Si(001) using X-ray photoelectron spectroscopy, scanning tunneling microscopy, and DFT calculations. Exploring this in principle simple system reveals a multitude of possible reaction channels spanning a wide range of energy barriers. However, experimentally we find the initial methanol adsorption always to proceed via O-H dissociation and further reaction channels to be operative only in the further course of the reaction.