Berlin 2024 – scientific programme
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O: Fachverband Oberflächenphysik
O 67: Poster: Oxide, Insulator and Semiconductor Surfaces
O 67.9: Poster
Wednesday, March 20, 2024, 18:00–20:00, Poster C
Preparation and characetrization of atomically well-ordered AlInP(100) surfaces for PEC application — •Mohammad Amin Zare Pour1, Sahar Shekarabi1, Isaac Azahel Ruiz Alvarado2, Agnieszka Paszuk1, Wolfram Jaegermann3, Wolf Gero Schmidt2, and Thomas Hannappel1 — 1Grundlagen von Energiematerialien, Institut für Physik, Technische Universität Ilmenau — 2Lehrstuhl für Theoretische Materialphysik, Universität Paderborn — 3Surface Science Laboratory, Department of Materials and Earth Sciences, Technische Universität Darmstadt
AlInP(100) is commonly used for a selective transport of electrons in a so-called window layer in a highly-efficientefficient III-V multijunction solar or photoelectrochemical cells. The surface preparation of the AlInP(100) can influence its stability to a photocorrosion when exposed to an electrolyte or the structure of the heterointerface after growth of a thin metal oxide passivation layer. Here we combine experimental and theory to study different surface reconstructions of AlInP(100). Preparation of AlInP(100) surfaces was monitored in situ by reflection anisotropy spectroscopy (RAS) and benchmarked with XPS and LEED. By fine tuning the post-growth annealing temperature we prepare either phosphorus- or indium-terminated AlInP(100) surface, as confirmed by LEED and XPS. RA spectra on these surfaces are in agreement with DFT calculations. XPS results confirm P-P dimers and In-In bonds on the P- and In-terminated AlInP(100) surface, respectively. We determine a band bending toward the surface of 1.0 eV and 1.7 eV for the P- and In-terminated AlInP(100) surfaces, respectively, indicating that the In-rich surface has more surface states.
Keywords: AlInP; Surface reconstructions; MOCVD; X-ray photoelectron spectroscop; in-situ reflection anisotropy spectroscopy