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O: Fachverband Oberflächenphysik

O 79: 2D Materials V: Growth, Structure and Substrate Interaction

O 79.4: Vortrag

Donnerstag, 21. März 2024, 11:15–11:30, MA 005

Influence of the substrate on pore creation in single-layer MoS₂ using highly charged ion irradiation — •Yossarian Liebsch¹, Leon Daniel¹, Lucia Skopinski¹, Carolin Frank¹, Umair Javed², Jani Kotakoski², and Marika Schleberger² — ¹University Duisburg-Essen, Duisburg, Germany — ²Universität Wien,Vienna, Austria

Ion irradiation serves as a versatile tool for modifying 2D materials and surfaces, enabling the creation of defects, pores, and incisions. However, characterizing the nanometer-sized structural changes induced by ion irradiation has proven challenging, often necessitating high-resolution TEM. Notably, direct characterization of such defects has primarily focused on suspended 2D materials, neglecting the substrate’s influence on defect formation during irradiation. To address this issue, we irradiated single-layer MoS₂ on a Si/SiO₂ substrate using highly charged ions (HCIs) at 20 keV and 180 keV and different charge states. Subsequently, the material was transferred to a TEM-grid and analyzed using scanning transmission electron microscopy (STEM). Well-defined, round pores were observed for all kinetic and potential energies, indicating a rather small influence of sputtered substrate material. In contrast to suspended MoS₂, significant differences in both pore size and creation efficiency were evident. These observations hold particular significance for 2D material applications that utilize ion irradiation as a mean to create pores and catalytically active sites, as they allow for a precise control of pore density and defective area by choosing appropriate irradiation parameters.

Keywords: Ion irradiation; STEM; defects; pore; substrate